Filtering during in-situ monitoring of polishing

ABSTRACT

A method of controlling polishing includes polishing a substrate, monitoring the substrate during polishing with an in-situ monitoring system, filtering a signal from the monitoring system to generate a filtered signal, and determining at least one of a polishing endpoint or an adjustment for a polishing rate from the filtered signal. The filtering includes modelling a plurality of periodic disturbances at a plurality of different frequencies using a plurality of disturbance states, modelling an underlying signal using a plant state, and applying a linear prediction filter to the plant state and the plurality of disturbance states to generate a filtered signal representing the underlying signal.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. Pat. Application Serial No.17/886,386, filed on Aug. 11, 2022, which is a divisional of U.S. Pat.Application Serial No. 16/294,382, filed on Mar. 6, 2019, which claimspriority to U.S. Provisional Pat. Application Serial No. 62/641,950,filed on Mar. 12, 2018, the disclosures of which are incorporated byreference.

TECHNICAL FIELD

This disclosure relates to using applying a filter to data acquired byan in-situ monitoring system to control polishing.

BACKGROUND

An integrated circuit is typically formed on a substrate by thesequential deposition of conductive, semiconductive, or insulativelayers on a silicon wafer. One fabrication step involves depositing afiller layer over a non-planar surface and planarizing the filler layer.For certain applications, the filler layer is planarized until the topsurface of a patterned layer is exposed. A conductive filler layer, forexample, can be deposited on a patterned insulative layer to fill thetrenches or holes in the insulative layer. After planarization, theportions of the metallic layer remaining between the raised pattern ofthe insulative layer form vias, plugs, and lines that provide conductivepaths between thin film circuits on the substrate. For otherapplications, such as oxide polishing, the filler layer is planarizeduntil a predetermined thickness is left over the non planar surface. Inaddition, planarization of the substrate surface is usually required forphotolithography.

Chemical mechanical polishing (CMP) is one accepted method ofplanarization. This planarization method typically requires that thesubstrate be mounted on a carrier or polishing head. The exposed surfaceof the substrate is typically placed against a rotating polishing pad.The carrier head provides a controllable load on the substrate to pushit against the polishing pad. An abrasive polishing slurry is typicallysupplied to the surface of the polishing pad.

One problem in CMP is determining whether the polishing process iscomplete, i.e., whether a substrate layer has been planarized to adesired flatness or thickness, or when a desired amount of material hasbeen removed. Variations in the slurry distribution, the polishing padcondition, the relative speed between the polishing pad and thesubstrate, and the load on the substrate can cause variations in thematerial removal rate. These variations, as well as variations in theinitial thickness of the substrate layer, cause variations in the timeneeded to reach the polishing endpoint. Therefore, the polishingendpoint usually cannot be determined merely as a function of polishingtime.

In some systems, the substrate is monitored in-situ during polishing,e.g., by monitoring the torque required by a motor to rotate the platenor carrier head. However, existing monitoring techniques may not satisfyincreasing demands of semiconductor device manufacturers.

SUMMARY

In one aspect, a method of controlling polishing includes polishing asubstrate, monitoring the substrate during polishing with an in-situmonitoring system including generating a signal from a sensor, filteringthe signal to generate a filtered signal, and determining at least oneof a polishing endpoint or an adjustment for a polishing rate from thefiltered signal. The signal includes a sequence of measured values, andthe filtered signal including a sequence of adjusted values. Thefiltering includes modelling a plurality of periodic disturbances at aplurality of different frequencies using a plurality of disturbancestates, modelling an underlying signal using a plant state, and applyinga linear prediction filter to the plant state and the plurality ofdisturbance states to generate a filtered signal representing theunderlying signal.

In another aspect, a computer program product includes acomputer-readable medium having instructions, which, when executed by aprocessor, cause the processor to receive, during polishing of asubstrate, a signal from an in-situ monitoring system, filter the signalto generate a filtered signal, and determine at least one of a polishingendpoint or an adjustment for a polishing rate from the filtered signal.The signal includes a sequence of measured values, and the filteredsignal includes a sequence of adjusted values. The instructions tofilter the signal include instructions to model a plurality of periodicdisturbances at a plurality of different frequencies using a pluralityof disturbance states, model an underlying signal using a plant state,and apply a linear prediction filter to the plant state and theplurality of disturbance states to generate a filtered signalrepresenting the underlying signal.

In another aspect, a polishing system includes a platen to support apolishing pad, a carrier head to hold a substrate in contact with thepolishing pad during polishing, an in-situ monitoring system configuredto generate a signal from a sensor that monitors the substrate duringpolishing, and a controller. The controller is configured to receive thesignal from the in-situ monitoring system during polishing of thesubstrate, filter the signal to generate a filtered signal, anddetermine at least one of a polishing endpoint or an adjustment for apolishing rate from the filtered signal. The signal includes a sequenceof measured values, and the filtered signal including a sequence ofadjusted values. The controller is configured to filter the signal bymodeling a plurality of periodic disturbances at a plurality ofdifferent frequencies using a plurality of disturbance states, modelingan underlying signal using a plant state, and apply a linear predictionfilter to the plant state and the plurality of disturbance states togenerate a filtered signal representing the underlying signal.

Implementations may include one or more of the following features.

The plurality of periodic disturbances may be exactly two or exactlythree periodic disturbances. The plurality of periodic disturbances mayinclude a head sweep disturbance and/or platen rotation disturbance.

Filtering may include modelling the underlying signal using a pluralityof plant states. The in-situ monitoring system may include a motorcurrent monitoring system, and the plurality of plant states may includea filtered motor current and a motor current rate. The in-situmonitoring system may include a torque monitoring system, and theplurality of plant states may include a filtered torque and a torquerate.

The linear prediction filter may include a Kalman filter.

The in-situ monitoring system may include a motor current monitoringsystem or motor torque monitoring system. The in-situ monitoring systemmay include a motor torque monitoring system.

Implementations can include one or more of the following potentialadvantages. Periodic disturbances in a signal can be reduced withoutintroducing significant filter delay. Polishing can be halted morereliably at a target thickness.

The details of one or more embodiments are set forth in the accompanyingdrawings and the description below. Other aspects, features andadvantages will be apparent from the description and drawings, and fromthe claims.

DESCRIPTION OF DRAWINGS

FIG. 1 illustrates a schematic cross-sectional view of an example of apolishing apparatus.

FIG. 2 is schematic illustrating decomposition of a signal intocomponents.

FIG. 3 is a graph comparing the raw motor torque trace and filteredplaten torque trace generated by a customized filter.

Like reference symbols in the various drawings indicate like elements.

DETAILED DESCRIPTION

In some semiconductor fabrication processes polishing, the process ismonitored by an in-situ monitoring system. However, in some situationsthe signal from the in-situ monitoring system can be corrupted byperiodic or sinusoidal disturbances. These disturbances can originatefrom a variety of sources, often associated with motion of thesubstrate. For example, in a polishing operation, such disturbances canoriginate from platen rotation or oscillating sweep of the carrier head.Sometimes higher harmonics are also present; this could be due tononlinearities such as friction.

In general, for semiconductor processing, it is desirable to extract asignal from the in-situ monitoring system that can be used for end pointcontrol. Current techniques to remove periodic or sinusoidaldisturbances that involve low pass filtering of the signal can result inadditional delay, which can impact accuracy of the endpoint. However, atechnique that involves filtering out the sinusoids (sinusoidalrejection), using a model-based approach, can result in minimal delay orsignal distortion.

As an example, the torque or current required by a motor to cause theplaten or carrier head to rotate at a specified rotation rate can bemonitored. This motor torque is a noisy signal that can be subject tothe periodic disturbances. For example, the motor torque and motorcurrent signal-versus-time curves can be corrupted not only by randomnoise, but also by a large systematic, sinusoidal disturbance due tosweeping of the carrier head 140 across the polishing pad. The filteringapproach can be applied to such a signal.

When an underlying layer is exposed, assuming the underlying layer has adifferent coefficient of friction against the polishing layer than theoverlying layer, the polishing endpoint can be determined by detectingthe resulting change in motor torque. For example, in some semiconductorchip fabrication processes an overlying layer, e.g., silicon oxide orpolysilicon, is polished until an underlying layer, e.g., a dielectric,such as silicon oxide, silicon nitride or a high-K dielectric, isexposed.

FIG. 1 illustrates an example of a polishing apparatus 100. Thepolishing apparatus 100 includes a rotatable disk-shaped platen 120 onwhich a polishing pad 110 is situated. The polishing pad 110 can be atwo-layer polishing pad with an outer polishing layer 112 and a softerbacking layer 114. The platen is operable to rotate about an axis 125.For example, a motor 121, e.g., a DC induction motor, can turn a driveshaft 124 to rotate the platen 120.

The polishing apparatus 100 can include a port 130 to dispense polishingliquid 132, such as abrasive slurry, onto the polishing pad 110 to thepad. The polishing apparatus can also include a polishing padconditioner to abrade the polishing pad 110 to maintain the polishingpad 110 in a consistent abrasive state.

The polishing apparatus 100 includes at least one carrier head 140. Thecarrier head 140 is operable to hold a substrate 10 against thepolishing pad 110. Each carrier head 140 can have independent control ofthe polishing parameters, for example pressure, associated with eachrespective substrate.

The carrier head 140 can include a retaining ring 142 to retain thesubstrate 10 below a flexible membrane 144. The carrier head 140 alsoincludes one or more independently controllable pressurizable chambersdefined by the membrane, e.g., three chambers 146 a-146 c, which canapply independently controllable pressurizes to associated zones on theflexible membrane 144 and thus on the substrate 10 (see FIG. 1 ).Although only three chambers are illustrated in FIG. 1 for ease ofillustration, there could be one or two chambers, or four or morechambers, e.g., five chambers.

The carrier head 140 is suspended from a support structure 150, e.g., acarousel, and is connected by a drive shaft 152 to a carrier headrotation motor 154, e.g., a DC induction motor, so that the carrier headcan rotate about an axis 155. Optionally each carrier head 140 canoscillate laterally, e.g., on sliders on the carousel 150, or byrotational oscillation of the carousel itself. In typical operation, theplaten is rotated about its central axis 125, and each carrier head isrotated about its central axis 155 and translated laterally across thetop surface of the polishing pad.

While only one carrier head 140 is shown, more carrier heads can beprovided to hold additional substrates so that the surface area ofpolishing pad 110 may be used efficiently. Thus, the number of carrierhead assemblies adapted to hold substrates for a simultaneous polishingprocess can be based, at least in part, on the surface area of thepolishing pad 110.

A controller 190, such as a programmable computer, is connected to themotors 121, 154 to control the rotation rate of the platen 120 andcarrier head 140. For example, each motor can include an encoder thatmeasures the rotation rate of the associated drive shaft. A feedbackcontrol circuit, which could be in the motor itself, part of thecontroller, or a separate circuit, receives the measured rotation ratefrom the encoder and adjusts the current supplied to the motor to ensurethat the rotation rate of the drive shaft matches at a rotation ratereceived from the controller.

The polishing apparatus also includes an in-situ monitoring system 160,e.g., a motor current or motor torque monitoring system, which can beused to determine a polishing endpoint. The in-situ monitoring system160 includes a sensor to measure a motor torque and/or a currentsupplied to a motor.

For example, a torque meter 160 can be placed on the drive shaft 124and/or a torque meter 162 can be placed on the drive shaft 152. Theoutput signal of the torque meter 160 and/or 162 is directed to thecontroller 190.

Alternatively or in addition, a current sensor 170 can monitor thecurrent supplied to the motor 121 and/or a current sensor 172 canmonitor the current supplied to the motor 154. The output signal of thecurrent sensor 170 and/or 172 is directed to the controller 190.Although the current sensor is illustrated as part of the motor, thecurrent sensor could be part of the controller (if the controller itselfoutputs the drive current for the motors) or a separate circuit.

The output of the sensor can be a digital electronic signal (if theoutput of the sensor is an analog signal then it can be converted to adigital signal by an ADC in the sensor or the controller). The digitalsignal is composed of a sequence of signal values, with the time periodbetween signal values depending on the sampling frequency of the sensor.This sequence of signal values can be referred to as asignal-versus-time curve. The sequence of signal values can be expressedas a set of values x_(n).

As noted above, the “raw” digital signal from the sensor can be smoothedusing a filter.

As shown in FIG. 2 , the measured “raw” signal can be decomposed in thetime domain into multiple signals. In particular, the measured signalcan be decomposed into multiple sinusoid components, a white noisecomponent, and a fundamental signal.

To asymptotically reject a deterministic disturbance, a model of thedisturbance can be embedded in the “plant” model for the signal (e.g.,.an Internal Model Principle). The model of the disturbance can used forsinusoidal disturbance rejection, although other disturbances can bemodeled.

For the purpose of monitoring a CMP operation, a “plant” model of theCMP system captures the rotational dynamics with friction (MT orInterface). In contrast, an augmented model includes the “plant” statesfor the plant model, plus the disturbance states of a disturbance model.To perform the filtering, an appropriate Kalman filter can be run on theaugmented model using the raw measured signal.

A set of n sinusoids can be modeled as

$\sum\limits_{m = 1}^{n}{A_{m}\sin\left( {\omega_{m}t + \varphi_{m}} \right)}$

The dominant frequencies for attenuation can be obtained throughexperimentation and offline analysis using a Fast Fourier Transform(FFT). Consequently, ω_(m) is known for multiple values of m = 1 to n,where n sinusoidal disturbances are being modeled.

The states for a single sinusoid with known frequency ω_1 can be definedas follows:

$X_{d\_ k} = \left\lbrack \begin{array}{l}{A_{m}\sin\left( {\omega_{1}t + \varphi} \right)} \\{A_{m}\cos\left( {\omega_{1}t + \varphi} \right)}\end{array} \right\rbrack = \left\lbrack \begin{array}{l}X_{1d} \\X_{2d}\end{array} \right\rbrack_{k}$

Assuming the sampling period is Ts, the (k+1)th sample is (e.g., usingsin(∝+β) expansion):

$\begin{array}{l}{X_{d\_ k + 1} = \left\lbrack \begin{array}{l}{A_{m}\sin\left( {\omega_{1}\left\{ {t + \text{T}_{\text{s}}} \right\} + \varphi} \right)} \\{A_{m}\cos\left( {\omega_{1}\left\{ {t + \text{T}_{\text{s}}} \right\} + \varphi} \right)}\end{array} \right\rbrack = \left\lbrack \begin{array}{l}X_{1d} \\X_{2d}\end{array} \right\rbrack_{k + 1}} \\{= \left\lbrack \begin{array}{rr}{\cos\left( {\omega_{1}\text{T}_{\text{s}}} \right)} & {\sin\left( {\omega_{1}\text{T}_{\text{s}}} \right)} \\{- \sin\left( {\omega_{1}\text{T}_{\text{s}}} \right)} & {\cos\left( {\omega_{1}\text{T}_{\text{s}}} \right)}\end{array} \right\rbrack\left\lbrack \begin{array}{l}{A_{m}\sin\left( {\omega_{1}t + \varphi} \right)} \\{A_{m}\cos\left( {\omega_{1}t + \varphi} \right)}\end{array} \right\rbrack}\end{array}$

Thus,

$X_{d\_ k + 1} = \left\lbrack \begin{array}{rr}{\cos\left( {\omega_{1}\text{T}_{\text{s}}} \right)} & {\sin\left( {\omega_{1}\text{T}_{\text{s}}} \right)} \\{- \sin\left( {\omega_{1}\text{T}_{\text{s}}} \right)} & {\cos\left( {\omega_{1}\text{T}_{\text{s}}} \right)}\end{array} \right\rbrack\left\lbrack \begin{array}{l}X_{1d} \\X_{2d}\end{array} \right\rbrack_{k} = \text{A}_{d}*X_{d\_ k}$

If multiple sinusoids are present, then an A-matrix for multiplesinusoids (e.g., n sinusoids), can be generated in block diagonal formatas follows:

$X_{d\_ k + 1} = \begin{bmatrix}A_{1} & \cdots & 0 \\ \vdots & \ddots & \vdots \\0 & \cdots & A_{n}\end{bmatrix}\left\lbrack \begin{array}{l}X_{1d\_ k} \\ \cdot \\ \cdot \\ \cdot \\ \cdot \\X_{nd\_ k}\end{array} \right\rbrack_{k} = A_{d}*X_{d\_ k}$

with each sinusoid having two 2 states as shown above. In addition, themodel is still linear. With this approach, it is not necessary toestimate the phase and amplitude separately.

However, if the frequency is unknown, the frequency can be another stateof the model. In this case, the model becomes nonlinear (and an ExtendedKalman Filter may be needed).

Turning now to the plant model, two plant states can be denoted asfollows:

$X_{p\_ k} = \begin{bmatrix}{Filtered\mspace{6mu} Torque} \\{Torque\mspace{6mu} Rate}\end{bmatrix}_{k} = \begin{bmatrix}T \\{T\_ R}\end{bmatrix}_{k}$

The Filtered Torque will be the fundamental signal we are seeking (inwhich disturbances have been reduced or removed).

The model can be expressed as follows

$\begin{matrix}{X_{p\_ k + 1} = \begin{bmatrix}1 & \text{T}_{\text{s}} \\0 & 1\end{bmatrix}X_{p\_ k} + \underset{\text{White noise}}{\left\lbrack \begin{array}{l}\omega_{1} \\\omega_{2}\end{array} \right\rbrack_{k}}} \\{= A_{p} \ast X_{p\_ k} + W_{k}\mspace{6mu}\mspace{6mu}\mspace{6mu}\mspace{6mu}\mspace{6mu}\mspace{6mu}\mspace{6mu}\mspace{6mu}\mspace{6mu}\mspace{6mu}\mspace{6mu}\mspace{6mu}\mspace{6mu}\mspace{6mu}\mspace{6mu}\mspace{6mu}\mspace{6mu}\mspace{6mu}}\end{matrix}$

with

T_(k+1) = T_(k) + T_R_(k) + ω_(1_k)

T_R_(k+1) = T_R_(k) + ω_(2_k)

Alternatively, a single plant stated can be denoted as follows:

X_(p_k) = [Filtered Torque]_(k) = T_(k)

In this case

X_(p_k + 1) = T_(k+1) = T_(k) + ω_(1k)

An augmented state can be defined as follows:

X_(a_k) = [X_(d_k)   X_(p_k)]^(T)

The augmented model with augmented dynamics and measured torque outputequations can be expressed as:

$y = \left\lbrack {1\mspace{6mu} 0\mspace{6mu}\ldots\mspace{6mu}.\mspace{6mu}.\mspace{6mu}\mspace{6mu} 1\mspace{6mu} 0\mspace{6mu}\mspace{6mu} 1\mspace{6mu} 0} \right\rbrack\left\lbrack \begin{array}{l}X_{d} \\X_{p}\end{array} \right\rbrack_{k}$

Conventional Kalman filters are described in “An Introduction to theKalman Filter” by Welch and Bishop. A standard Kalman filter(specifically, a “discrete Kalman filter (DKF)”) has smoothingcapabilities because the noise characteristics of the system beingfiltered are included in the formulas. A standard Kalman filter alsoemploys a predictive step that estimates a future data value based oncurrent and past data. The predictive step usually only extends into thefuture by one data step (i.e. near-term prediction).

FIG. 3 illustrates a graph of both the “raw” platen torque signal 200,and a filtered signal 210 generated by applying a filter that uses amodel having three sinusoidal disturbances and one torque state. Thefiltered signal is relatively clean, and does not suffer fromsignificant delay.

Implementations and all of the functional operations described in thisspecification can be implemented in digital electronic circuitry, or incomputer software, firmware, or hardware, including the structural meansdisclosed in this specification and structural equivalents thereof, orin combinations of them. Implementations described herein can beimplemented as one or more non-transitory computer program products,i.e., one or more computer programs tangibly embodied in a machinereadable storage device, for execution by, or to control the operationof, data processing apparatus, e.g., a programmable processor, acomputer, or multiple processors or computers.

A computer program (also known as a program, software, softwareapplication, or code) can be written in any form of programminglanguage, including compiled or interpreted languages, and it can bedeployed in any form, including as a stand alone program or as a module,component, subroutine, or other unit suitable for use in a computingenvironment. A computer program does not necessarily correspond to afile. A program can be stored in a portion of a file that holds otherprograms or data, in a single file dedicated to the program in question,or in multiple coordinated files (e.g., files that store one or moremodules, sub programs, or portions of code). A computer program can bedeployed to be executed on one computer or on multiple computers at onesite or distributed across multiple sites and interconnected by acommunication network.

The processes and logic flows described in this specification can beperformed by one or more programmable processors executing one or morecomputer programs to perform functions by operating on input data andgenerating output. The processes and logic flows can also be performedby, and apparatus can also be implemented as, special purpose logiccircuitry, e.g., an FPGA (field programmable gate array) or an ASIC(application specific integrated circuit).

The term “data processing apparatus” encompasses all apparatus, devices,and machines for processing data, including by way of example aprogrammable processor, a computer, or multiple processors or computers.The apparatus can include, in addition to hardware, code that creates anexecution environment for the computer program in question, e.g., codethat constitutes processor firmware, a protocol stack, a databasemanagement system, an operating system, or a combination of one or moreof them. Processors suitable for the execution of a computer programinclude, by way of example, both general and special purposemicroprocessors, and any one or more processors of any kind of digitalcomputer.

Computer readable media suitable for storing computer programinstructions and data include all forms of non volatile memory, mediaand memory devices, including by way of example semiconductor memorydevices, e.g., EPROM, EEPROM, and flash memory devices; magnetic disks,e.g., internal hard disks or removable disks; magneto optical disks; andCD ROM and DVD-ROM disks. The processor and the memory can besupplemented by, or incorporated in, special purpose logic circuitry.

The above described polishing apparatus and methods can be applied in avariety of polishing systems. Either the polishing pad, or the carrierhead, or both can move to provide relative motion between the polishingsurface and the wafer. For example, the platen may orbit rather thanrotate. The polishing pad can be a circular (or some other shape) padsecured to the platen. Some aspects of the endpoint detection system maybe applicable to linear polishing systems (e.g., where the polishing padis a continuous or a reel-to-reel belt that moves linearly). Thepolishing layer can be a standard (for example, polyurethane with orwithout fillers) polishing material, a soft material, or afixed-abrasive material. Terms of relative positioning are used; itshould be understood that the polishing surface and wafer can be held ina vertical orientation or some other orientations.

While this specification contains many specifics, these should not beconstrued as limitations on the scope of what may be claimed, but ratheras descriptions of features that may be specific to particularembodiments of particular inventions. In some implementations, themethod could be applied to other combinations of overlying andunderlying materials, and to signals from other sorts of in-situmonitoring systems, e.g., optical monitoring or eddy current monitoringsystems.

What is claimed is:
 1. A method of controlling polishing, comprising:polishing a substrate; during polishing monitoring the substrate with anin-situ monitoring system, the monitoring including generating a signalfrom a sensor, the signal including a sequence of measured values;filtering the signal to generate a filtered signal, the filtered signalincluding a sequence of adjusted values, the filtering includingmodelling a plurality of periodic disturbances at a plurality ofdifferent frequencies, modelling an underlying signal, and applying alinear prediction filter to the modelled underlying signal with themodelled plurality of periodic disturbances to generate the filteredsignal representing the underlying signal with the periodic disturbancesfiltered out; and causing the polishing system to at least one of haltpolishing of the substrate or adjust a polishing rate of the substratebased on the filtered signal.
 2. The method of claim 1, wherein theplurality of periodic disturbances include a head sweep disturbanceand/or platen rotation disturbance.
 3. The method of claim 1, comprisingmodelling a rate of change of the underlying signal.
 4. The method ofclaim 3, wherein the in-situ monitoring system comprises a motor currentmonitoring system, and the method comprises modelling a filtered motorcurrent and a motor current rate.
 5. The method of claim 3, wherein thein-situ monitoring system comprises a torque monitoring system, and themethod comprises modelling a filtered torque and a torque rate.
 6. Apolishing system, comprising: a platen to support a polishing pad; acarrier head to hold a substrate in contact with the polishing padduring polishing; an in-situ monitoring system configured to generate asignal from a sensor that monitors the substrate during polishing, thesignal including a sequence of measured values; and a controllerconfigured to receive, during polishing of the substrate, the signalfrom the in-situ monitoring system, filter the signal to generate afiltered signal, the filtered signal including a sequence of adjustedvalues, wherein the controller is configured to filter the signal bymodeling a plurality of periodic disturbances at a plurality ofdifferent frequencies, modeling an underlying signal, and applying alinear prediction filter to the modelled underlying signal with themodelled plurality of periodic disturbances to generate the filteredsignal representing the underlying signal with the periodic disturbancesfiltered out, and at least one of halt polishing or adjust a polishingrate based on the filtered signal.
 7. The system of claim 6, wherein thein-situ monitoring system comprises a motor current monitoring system ormotor torque monitoring system.
 8. The system of claim 7, wherein thein-situ monitoring system comprises a motor current monitoring system,and the controller is configured to model a filtered motor current and amotor current rate.
 9. The system of claim 7, wherein the in-situmonitoring system comprises a motor torque monitoring system, and thecontroller is configured to model a filtered torque and a torque rate.10. The system of claim 7, wherein the in-situ monitoring systemcomprises a platen motor current monitoring system, a platen motortorque monitoring system, a carrier head motor current monitoringsystem, or a carrier head motor torque monitoring system.
 11. The systemof claim 6, wherein the linear prediction filter comprises a Kalmanfilter.
 12. The system of claim 6, wherein the plurality of periodicdisturbances consists of two periodic disturbances.
 13. The system ofclaim 6, wherein the plurality of periodic disturbances consists ofthree periodic disturbances.
 14. The system of claim 6, wherein theplurality of periodic disturbances include a head sweep disturbance. 15.The system of claim 6, wherein the plurality of periodic disturbancesinclude a platen rotation disturbance.
 16. A non-transitory computerreadable medium having instructions for causing one or more computersto: receive a signal from a sensor of an in-situ monitoring system thatmonitors a substrate during polishing of the substrate, the signalincluding a sequence of measured values; filter the signal to generate afiltered signal, the filtered signal including a sequence of adjustedvalues, the instructions to filter including instructions to model aplurality of periodic disturbances at a plurality of differentfrequencies, model an underlying signal, and apply a linear predictionfilter to the modelled underlying signal with the modelled plurality ofperiodic disturbances to generate the filtered signal representing theunderlying signal with the periodic disturbances filtered out; and causethe polishing system to at least one of halt polishing of the substrateor adjust a polishing rate of the substrate based on the filteredsignal.
 17. The computer program product of claim 16, wherein theplurality of periodic disturbances include a head sweep disturbanceand/or platen rotation disturbance.
 18. The computer program product ofclaim 16, comprising instructions to model the plurality of periodicdisturbances by modeling the plurality of periodic disturbances as aplurality of sinusoids.
 19. The computer program product of claim 18,wherein the plurality of different frequencies are preset values. 20.The computer program product of claim 18, wherein a frequency of theplurality of different frequencies is a variable in a model used formodeling the plurality of periodic disturbance.
 21. The computer programproduct of claim 16, comprising instructions to model a rate of changeof the underlying signal.